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Donor-Acceptor Pairs in Silicon

Published online by Cambridge University Press:  03 September 2012

H. E. Altink ,
T. Gregorkiewicz  and
C. A. J. Ammerlaan
H. E. Altink
Affiliation:
Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, Valckenierstraat 65–67, NL-1018 XE Amsterdam, The Netherlands
T. Gregorkiewicz
Affiliation:
Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, Valckenierstraat 65–67, NL-1018 XE Amsterdam, The Netherlands
C. A. J. Ammerlaan
Affiliation:
Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, Valckenierstraat 65–67, NL-1018 XE Amsterdam, The Netherlands
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Abstract

Stable forms of donor-acceptor pairs in silicon arise from the interaction between negatively charged acceptors and 3d transition element donors, which, occupying interstitial sites, have high mobilities. The atomic and electronic structure of these pairs can be studied in detail by magnetic resonance. The symmetry of centers as observed in the resonance experiments gives strict constraints on the applicable atomic models. The spin of centers is related to their charge state. Hyperfine interactions frequently lead to a specific structure in the spectra, which characterizes the chemical identity of atomic components of the pair. Deep level transient spectroscopy provides a way of sensitive observation of electrically active impurities: to determine their concentrations and associated electronic levels. It allows the study of the kinetics of the pair formation process and thermally induced dissociation; binding energies can be determined. Transformation of pairs as a result of illumination was also observed. Several of the pairs can exist in geometrically different atomic configurations leading to the phenomenon of bi- or multi-stability. In the paper the donor-acceptor pair formation process is illustrated by examples involving the substitutional double acceptor zinc, for which new data became recently available.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 525
Copyright
Copyright © Materials Research Society 1992

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References

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