Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T16:59:45.389Z Has data issue: false hasContentIssue false
  • English
  • Français

The Donor State of Vanadium in Indium Phosphide

Published online by Cambridge University Press:  28 February 2011

Georges Bremond ,
A. Nouailhat ,
G. Guillot ,
B. Deveaud ,
B. Lambert ,
Y. Toudic ,
B. Clerjaud  and
C. Naud
Georges Bremond
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
A. Nouailhat
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
G. Guillot
Affiliation:
LPM, INSA DE LYON, 69621 Villeurbanne Cédex (France)
B. Deveaud
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion (France)
B. Lambert
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion (France)
Y. Toudic
Affiliation:
CNET/LAB/ICM, B.P. 40, 22301 Lannion (France)
B. Clerjaud
Affiliation:
OMC, UNIVERSITE P. & M. Curie, Tour n°13, 75230 Paris Cédex (France)
C. Naud
Affiliation:
OMC, UNIVERSITE P. & M. Curie, Tour n°13, 75230 Paris Cédex (France)
Get access

Abstract

We have performed studies on Vanadium doped InP, especially p-type InP codoped with Zn and V. Luminescence excitation experiments, DLTS, DLOS and absorption experiments lead to the conclusion that the donor level (V3+/V4+) of Vanadium is at about 0.2 eV above the valence band. Optical cross-sections that are determined by DLOS allow to observe for the first time a resonance in the valence band of a III-V semiconductor that we tentatively interpret as an excited state of V4+.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 359
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 KUTT, W., BIMBERG, D., MAIER, M., KRAUTLE, H., KOHL, F., BAUSER, E.. Appl.Phys.Lett. 44, p. 1078 (1984)CrossRefGoogle Scholar
2 ROUSSEL, A. MIRCEA, MARTIN, G.M., LOWTHER, B.E.. Solid State Commun. 36, 171 (1980)Google Scholar
3 TERAO, H., SUNAKAWA, H., OHATA, K., WATANABE, H.: In Semi-Insulating III Materials (Ed. Makram-Ebeid, S., Tuck, B.) (Ed. Shiva Ltd) p.54 (1982)Google Scholar
4 LAMBERT, B., DEVEAUD, B., TOUDIC, Y., PELOUS, G., PARIS, J.C., GRANDPIERRE, G.. Solid State Commun. 47, p.337 (1983)Google Scholar
5 NAUD, C., CLERJAUD, B., DEVEAUD, B., LAMBERT, B., PLOT, B., BREMOND, G., BENJEDDOU, C., GUILLOT, G., A. NOUAILHAT. To be published 6 SKOLNICK, M.S., DEAN, P.J., KANE, M.J., VILHEIN, Ch., ROBBINS, D.J., HAYES, W., COCKAYNE, B., McEWAN, W.R.. J.Phys. C16, p.767 (1983)Google Scholar
7 DEVEAUD, B., PICOLI, G., LAMBERT, B., MARTINEZ, G.. Phys.Rev. B29, p.5749 (1984)CrossRefGoogle Scholar
8 CHANTRE, A., VINCENT, G., BOIS, D.. Phys.Rev. B23, p.5335 (1981)Google Scholar
9 BREMOND, G., GUILLOT, G., NOUAILHAT, A., PICOLI, G.. To be published 10 BOIS, D., PINARD, P.. Phys.Rev. B9, p.4172 (1974)Google Scholar