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Donor Reactivation In Plasma-Irradiated GaAs Under Laser Illumination

Published online by Cambridge University Press:  15 February 2011

K. Wada  and
H. Nakanishi
K. Wada
Affiliation:
NTT System Electronics Laboratories, 3–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, Japan, [email protected]
H. Nakanishi
Affiliation:
NTT System Electronics Laboratories, 3–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, Japan, [email protected]
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Abstract

Reactivation of Si donors in Ar plasma-irradiated GaAs under reverse bias annealing (RBA) is substantially enhanced by Ar laser illumination. Reactivation occurs only in the surface layer and charge density overshoots its original donor density. These are identical to those observed by high temperature RBA without laser illumination. The activation energy of the reactivation rates is about 0.1 eV, whereas it is about 0.7 eV without laser illumination. The energy reduction is explained by charge state change of deactivators in terms of two hole capturing under minority carrier injection. These findings suggest that deep levels induced by complexes of Si donors with point defects should be present above midgap. The deep penetration mechanism of plasma-induced point defects is discussed, based on the present findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 69
Copyright
Copyright © Materials Research Society 1997

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