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Donage and in Situ Annealing During Ion Implantation

Published online by Cambridge University Press:  15 February 2011

D. K. Sadana ,
J. Washburn ,
P. F. Byrne  and
N. W. Cheung
D. K. Sadana
Affiliation:
Lawrence Berkeley Laboratory And Department Of Materials Science And Mineral Engineering, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory And Department Of Materials Science And Mineral Engineering, University of California, Berkeley, CA 94720
P. F. Byrne
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 KeV–11MeV and temperature range liquid nitrogen (LN)-100°C has been investigated.Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in situ annealing. Implantation to the same fluence at temperatures above 100°C does not produce αlayers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400°C. It was found that isolated small α zones (< 50 Å diameter)embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200°C. A model for in situ annealing during implantation is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 511
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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