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Domain Size Determination in Diamond Thin Films

Published online by Cambridge University Press:  26 February 2011

Y. M. LeGrice ,
R. J. Nemanich ,
J. T. Glass ,
Y. H. Lee ,
R. A Rudder  and
R. J. Markunas
Y. M. LeGrice
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695.
R. J. Nemanich
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695.
J. T. Glass
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695.
Y. H. Lee
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695.
R. A Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
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Abstract

In this study we develop a method which utilizes the linewidth of the diamond peak at 1332 cm−1 to determine the diamond domain sizes. We have carried out calculations based on the phonon dispersion curves of diamond and the breakdown of wavevector selection rules in Raman scattering. The linewidths of a series of diamond samples were calculated, and from this theory the dimensions of the diamond regions were obtained. The calculated domain sizes ranged from 57 to 100Å and were compared to values obtained from SEM micrographs which were between 5000 and 25000Å. This is consistent with other results which have found that domain sizes calculated from this theory are in general consistent with sizes determined from electrical conductivity measurements, not from microscopy techniques. In addition, this theory allows for the calculation of the amount of frequency shift due to microcrystallinity, so that the residual stress in the film can be found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 219
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Shroder, R.E., Nemanich, R.J., Glass, J.T., Phys. Rev. B (in press).Google Scholar
2. Nemanich, R.J., Solin, S.A., Martin, R.M., Phys. Rev. B 23, 6348 (1981).Google Scholar
3. Fauchet, P.M., Campbell, I.H., Critical Reveiws in Solid State and Materials Science 14 (S1), S79 (1988).Google Scholar
4. Temple, P.A., Hathaway, C.E., Phys. Rev. B 7, 3685 (1973).Google Scholar
5. Solin, S.A., Ramdas, A.K., Phys. Rev. B 1, 1687 (1970).Google Scholar
6. Gonzales-Hernandez, J., Azarbayajani, G.H., Tsu, R., Pollak, F.H., Appl. Phys. Lett. 47, 1350 (1985).Google Scholar
7. Solin, S.A., Kobliska, R.J., Amorphous and Liquid Semiconductors, ed. by Stuke, J. and Brenig, W., (Taylor and Francis, 1974), p. 1251.Google Scholar
8. Boppart, H., van Straaten, J., Silvera, I.F., Phys. Rev. B 32, 1423 (1985).Google Scholar
9. Lee, Y.H., Bachmann, K.J., Glass, J.T., Fall MRS Proceedings, 1989, (in press).Google Scholar