Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T09:40:04.720Z Has data issue: false hasContentIssue false
  • English
  • Français

Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI

Published online by Cambridge University Press:  28 February 2011

Karlheinz Hölzlein ,
G. Pensl ,
M. Schulz  and
N. M. Johnson
Karlheinz Hölzlein
Affiliation:
Holzlein, Pensl, Schulz University of Erlangen, Inst. of Applied Physics, GlOckstrasse 9, D-8520 Erlangen, FRG
G. Pensl
Affiliation:
Holzlein, Pensl, Schulz University of Erlangen, Inst. of Applied Physics, GlOckstrasse 9, D-8520 Erlangen, FRG
M. Schulz
Affiliation:
Holzlein, Pensl, Schulz University of Erlangen, Inst. of Applied Physics, GlOckstrasse 9, D-8520 Erlangen, FRG
N. M. Johnson
Affiliation:
Johnson Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

Cz-grown Si samples containing a high concentration of oxygen are investigated after various processing steps by DLTS. Heat treatments ranging from 500°C–1000°C are performed to study the formation and annihilation of the “New Oxygen Donor” (ND) traps. Hydrogenation at low temperature leads to a reduction of the ND trap states. The experimental results confirm the “SiOx Interface Model” which assumes two differing types of interfacerelated states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 481
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bourreti, A. Thibault-Desseaux, J., Seidman, D.N., J.Appl.Phys. 55, 825 (1984)CrossRefGoogle Scholar
2. Kanamori, A., Kanamori, M., J.Appl.Phys. 50, 8095 (1979)CrossRefGoogle Scholar
3. Hölzlein, K., Pensl, G., Schulz, M., Appl.Phys. A 34, 155 (1984)CrossRefGoogle Scholar
4. Hölzlein, K., Ph.D. Thesis, University of Erlangen, 1985 Google Scholar
5. Patel, J.R., in Semiconductor Silicon, edited by Huff, H.R., Kriegler, R.J. and Takeishi, Y. (Electrochem. Soc., Pennington, 1981), p. 189 Google Scholar
6. Kishino, S., Matsushita, Y., Kanamori, M., Iizuka, T., Jpn.J.Appl.Phys. 21, 1 (1982)Google Scholar
7. Johnson, N.M., Biegelsen, D.K., and Moyer, M.D., Appl.Phys.Lett. 40, 882 (1982)CrossRefGoogle Scholar
8. Johnson, N.M., Biegelsen, D.K., and Moyer, M.D., Appl.Phys.Lett. 38,995 (1981)CrossRefGoogle Scholar
9. Johnson, N.M. and Moyer, M.D., Appl.Phys.Lett. 46, 787 (1985)CrossRefGoogle Scholar
10. Schulz, M., Surface Sci. 132, 422(1983)Google Scholar
11. Razouk, R.R., Deal, B.E., J.Electrochem. Soc. 126, 1573 (1979)CrossRefGoogle Scholar
12. Hblzlein, K., Pensl, G., Schulz, M., Johnson, N.M., to be publishedGoogle Scholar