Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T06:59:20.906Z Has data issue: false hasContentIssue false
  • English
  • Français

DLTS study of 3C-SiC grown on Si using hexamethyldisilane

Published online by Cambridge University Press:  15 March 2011

M. Kato ,
M. Ichimura ,
E. Arai ,
Y. Masuda ,
Y. Chen ,
S. Nishino  and
Y. Tokuda
M. Kato
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
M. Ichimura
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
E. Arai
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Y. Masuda
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
Y. Chen
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
S. Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
Y. Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
Get access

Abstract

n-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relationship of defect density with epilayer thickness, epilayers with various thicknesses were grown. Relatively thin (<1.0μm thick) epilayers were found to contain defects with energy levels distributed in a wide energy range, while relatively thick (>2.2μm thick) epilayers contain a defect with an activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH4 and C3H8 (∼0.3eV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.3.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Masuda, Y., Chen, Y., Matsuura, H., Harima, H. and Nishino, S., Extended Abstracts of International Conference on Silicon Carbide and Related Materials, North Carolina, (1999) abs. No.119.Google Scholar
[2] Zhou, P., Spencer, M. G., Harris, G. L. and Fekade, K., Appl. Phys. Lett., 50, 1384 (1987).Google Scholar
[3] Zekentes, K., Kayiambaki, M. and Constantindis, G., Appl. Phys. Lett., 66, 3015 (1995).Google Scholar
[4] Nagesh, V., Farmer, J. W., Davis, R. F. and Kong, H. S., Appl. Phys. Lett., 50, 1138 (1987).Google Scholar
[5] Yamada, N., Kato, M., Ichimura, M., Arai, E. and Tokuda, Y., Jpn. J. Appl. Phys. Lett., 38, L1094 (1999).Google Scholar
[6] Tokuda, Y., Shimizu, N. and Usami, A., Jpn. J. Appl. Phys., 18, 309 (1979)Google Scholar
[7] Shibahara, K., Nishino, S. and Matsunami, H., J. Crystal Growth, 78, 538 (1986).Google Scholar
[8] Choyke, W. J., Feng, Z. C. and Powell, J. A., J. Appl. Phys., 64, 3163 (1988).Google Scholar