Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:11:57.598Z Has data issue: false hasContentIssue false
  • English
  • Français

A Dlts Investigation of The Effect of Ion Mass, Fluence and Energy on the Introduction of a Higher-Order Vacancy Cluster in Noble Gas Ion Bombarded n-Si

Published online by Cambridge University Press:  15 February 2011

P.N.K. Deenapanray  and
J.S. Williams
P.N.K. Deenapanray
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, Canberra, ACT 0200, pnk [email protected]
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, Canberra, ACT 0200
Get access

Abstract

We have recently reported the annealing and electrical properties of three new families (N1, N2 and N3) of vacancy complexes introduced in 1 keV He-, Ne- and Ar-ion bombarded nSi. In this paper we have employed deep level transient spectroscopy to investigate the ion mass, fluence and energy dependence of the introduction of N1 -defects. We observed an increase in the intensity of Ni -defects with increasing mass of bombarding ions for a fluence of 1×1012cm−2and flux of 1×1011cm−2s−1, which we have correlated with the mass dependence of nuclear energy deposition. The ratio of the intensities of Ni-defects to VO-center, [N1]/[VO], increased by ∼5 when bombarding with Ar- compared to He-ions. Increasing the Ar-ion fluence from 1×1012cm−2to l×1014cm−2for a flux of 5×1010 cm−2s−;1increased the intensity of N1-defects by ∼20 times, while [N1]/[VO] increased by a factor ∼2.3. N1-defects were not created by 5.4 MeV alpha-particle irradiation, but were present in varying relative concentrations in 1 to 150 keV He-ion bombarded n-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 121
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ashok, S., Krautle, H., and Beneking, H., Appl. Phys. Lett. 45, p. 431 (1984).Google Scholar
[2] Deenapanray, P.N.K., Perret, N.E., Brink, D.J., Auret, F.D., and Malherbe, J.B., J. Appl. Phys. 83, p. 4075 (1998).Google Scholar
[3] Brotherton, S.D. and Bradley, P., J. Appl. Phys. 53, p. 5720 (1982).Google Scholar
[4] Kimerling, L.C., Inst. Phys. Conf. Ser. 31, p. 221 (1977).Google Scholar
[5] Weber, J., Physica B 170, p. 201 (1991).Google Scholar
[6] Estreicher, S.K., Hastings, J.L., Derecskei-Kovacs, A., and Marynick, D.S., Phys. Rev. B 55, 5037 (1997).Google Scholar
[7] Estreicher, S.K., Hastings, J.L., and Fedders, P.A., Appl. Phys. Lett. 70, p. 432 (1997).Google Scholar
[8] Deenapanray, P.N.K., Auret, F.D., Ridgway, M.C., Goodman, S.A., Myburg, G., and Malherbe, J.B., J. Appl. Phys. 84, p. 2565 (1998).Google Scholar
[9] Auret, F.D., Deenapanray, P.N.K., Goodman, S.A., Meyer, W.E., and Myburg, G., J. Appl. Phys. 83, p. 5576 (1998).Google Scholar
[10] Deenapanray, P.N.K., Meyer, W.E., and Auret, F.D., Semicond. Sci. Technol., in press.Google Scholar
[11] Benton, J.L., Halliburton, K., Libertino, S., Eaglesham, D.J., and Coffa, S., J. Appl. Phys. 84, p. 4749 (1998).Google Scholar
[12] Ziegler, J.F., Biersack, J.P., and Littmark, U., in The stopping and Range of Ions in Solids, edited by Ziegler, J.F. (Pergamom Press, New York, 1985), Vol. 1.Google Scholar