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Dlts and CV Analysis of Doped and N-Implanted GaN

Published online by Cambridge University Press:  15 February 2011

D. Haase ,
M. Schmid ,
A. Dörnen ,
V. Härle ,
H. Bolay ,
F. Scholz ,
M. Burkard  and
H. Schweizer
D. Haase
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
M. Schmid
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
A. Dörnen
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
V. Härle
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
H. Bolay
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
F. Scholz
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
M. Burkard
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
H. Schweizer
Affiliation:
Physikalisches Institut, Universität Stuttgart, 70550 Stuttgart Federal Republic of Germany, [email protected]
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Abstract

We studied by deep level transient spectroscopy (DLTS) and capacitance-voltage (CV) measurements the effects of doping (Zn, S), nitrogen implantation and annealing of n-type GaN grown on sapphire by MOVPE. The DLTS spectra of the as grown samples show two defect levels which are assumed to be identical with recently reported levels [10, 11]. In N-implanted GaN a third level is introduced which is not detectable in our as grown samples. This levels concentration follows the increasing N-implantation density. The depth profiles of its concentration correlate with the distribution of implantation defects expected from Monte-Carlo simulation. After annealing at 900°C for 60s the additional defect level vanishes. The DLTS spectrum then resembles those of annealed as grown samples. The n-type carrier concentration (CV measurements) increases in samples with low N-implantation dose. This implantation effect can be removed also with the RTA step. The increasing carrier concentration provides evidence that the N vacancy is a donor in GaN. For Zn and S doped GaN deep defect levels has been found, which are reported here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 531
Copyright
Copyright © Materials Research Society 1996

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