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dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

Published online by Cambridge University Press:  06 May 2014

Fahid Algahtani ,
Patrick W Leech ,
Geoffrey K Reeves ,
Anthony S Holland ,
Mark Blackford ,
Gordon Thorogood ,
Jeffrey C McCallum  and
Brett C Johnson
Fahid Algahtani
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Patrick W Leech
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Geoffrey K Reeves
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Anthony S Holland
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Mark Blackford
Affiliation:
Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, NSW, 2232, Australia
Gordon Thorogood
Affiliation:
Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, NSW, 2232, Australia
Jeffrey C McCallum
Affiliation:
School of Physics, University of Melbourne, Melbourne, Vic, Australia
Brett C Johnson
Affiliation:
School of Physics, University of Melbourne, Melbourne, Vic, Australia
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Abstract

The formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

Keywords

Gex-ray diffraction (XRD)grain size
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1655: Symposium OO – Solid-State Chemistry of Inorganic Materials , 2014 , mrsf13-1655-oo03-20
Copyright
Copyright © Materials Research Society 2014 

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References

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