Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T18:39:39.095Z Has data issue: false hasContentIssue false
  • English
  • Français

Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

Published online by Cambridge University Press:  15 February 2011

H. J. Stein ,
J. A. Knapp  and
P. S. Peercy
H. J. Stein
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, USA
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, USA
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, USA This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE–AC04–76DP00789.
Get access

Abstract

Annealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 319
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, proceedings of previous MRS symposia on Laser Annealing, published by American Institute of Physics (1979), Academic Press (1980), and North Holland (1981).Google Scholar
2. Kimerling, L. C. and Benton, J. L., Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., (Academic Press, 1980) p. 385.CrossRefGoogle Scholar
3. Stein, H. J., Vook, F. L., Brice, D. K., Borders, J. A. and Picraux, S. T., Ion Implantation, edited by Eisen, F. H. and Chadderton, L. T., (Gordon and Breach, 1971) p. 9.Google Scholar
4. Cheng, L. J., Corelli, J. C., Corbett, J. W. and Watkins, G. D., Phys. Rev. 152, 761 (1966)CrossRefGoogle Scholar
5. Brice, D. K., Ion Implantation Range and Energy Distributions, Vol. 1,(IFI/Plenum, 1975) p. 571.Google Scholar
6. Knapp, J. A. and Picraux, S. T., submitted to Journal of Applied Physics.Google Scholar
7. Cullis, A. G., Webber, H. C. and Bailey, P., J. Phys. E. Sci. Instrum. 12, 688 (1979).CrossRefGoogle Scholar
8. Stein, H. J., Radiation Effects in Semiconductors, ed. by Corbett, J. W. and Watkins, G. D., (Gordon and Breach, 1971) p. 125.Google Scholar
9. Peercy, P. S. and Wampler, W. R., Submitted to Appl. Phys. Letters.Google Scholar