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Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Published online by Cambridge University Press:  31 January 2011

Reinhart Job ,
Franz-Josef Niedernostheide ,
Hans-Joachim Schulze  and
Holger Schulze
Reinhart Job
Affiliation:
[email protected][email protected], University of Hagen, Mathematics and Computer Science, Hagen, Germany
Franz-Josef Niedernostheide
Affiliation:
[email protected], Infineon Technologies AG, Munich, Germany
Hans-Joachim Schulze
Affiliation:
[email protected], Infineon Technologies AG, Munich, Germany
Holger Schulze
Affiliation:
[email protected], Infineon Technologies Austria AG, Villach, Austria
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Abstract

The formation and evolution of hydrogen- and vacancy-related donor and acceptor states were studied in helium-implanted and subsequently hydrogen plasma-treated n-type Float-Zone (FZ) silicon wafers by means of two-point-probe Spreading Resistance (SR) measurements. He+-implantation was executed at 3.75 MeV and 11 MeV at fluences of 1×1014 cm−2. Post-implantation 13.56-MHz RF-plasma hydrogenations were carried out at 150 W either for 15 min or 1 hour, applying substrate temperatures between 350 °C and 500 °C. Enhanced donor concentrations as well as acceptor-like states were observed in the subsurface layers of the treated FZ Si samples after 15-min post-implantation H-plasma exposures. Under appropriate process conditions, the latter ones compensated for the n-type doping, so that even buried p-type layers were created. The experimental results indicated that oxygen played a central role in the formation of the acceptor-like states.

Keywords

Siion-implantationdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B11-02
Copyright
Copyright © Materials Research Society 2010

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