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Distribution of Boron Atoms in Ion Implanted Compound Semiconductors
Published online by Cambridge University Press: 21 February 2011
Abstract
The nondestructive neutron depth profiling (NDP) technique has been used to measure the boron (10B) distributions in GaAs, CdTe, Hg0.7 Cd0.3 Te, and Hg0.85 Mn0.15Te after multiple energy ion implants. The NDP results are found to be in good agreement with the theoretical ion ranges obtained from Monte Carlo computer simulations. Only minor changes in the boron profiles were seen for the chosen annealing conditions.
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