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Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy

Published online by Cambridge University Press:  11 February 2011

Blake S. Simpkins ,
Edward T. Yu ,
Patrick Waltereit  and
James S. Speck
Blake S. Simpkins
Affiliation:
Department of Electrical and Computer Engineering and Program in Materials Science, University of California at San Diego, La Jolla, CA 92093–0407
Edward T. Yu
Affiliation:
Department of Electrical and Computer Engineering and Program in Materials Science, University of California at San Diego, La Jolla, CA 92093–0407
Patrick Waltereit
Affiliation:
Materials Department, University of California, Santa Barbara, Santa Barbara, California
James S. Speck
Affiliation:
Materials Department, University of California, Santa Barbara, Santa Barbara, California
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Abstract

Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) are used to image surfaces of GaN grown by molecular beam epitaxy (MBE). Numerical simulations are used to assist in the interpretation of SKPM images. Detailed analysis of the same area using both techniques allows imaging of surface potential variations arising from the presence of negatively charged dislocations and dislocation-related current leakage paths. Correlations between the charge state of dislocations, conductivity of leakage current paths, and possibly dislocation type can thereby be established. Approximately 25% of the leakage paths appear to be spatially correlated with negatively charged dislocation features. This is approximately the level of correlation expected due to spatial overlap of randomly distributed, distinct features of the size observed, suggesting that the negatively charged dislocations are distinct from those responsible for localized leakage paths found in GaN. The effects of charged dislocation networks on the local potential profile is modeled and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L2.4
Copyright
Copyright © Materials Research Society 2003

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References

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