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Distant Pair Interactions Involving Antisites in GaAs

Published online by Cambridge University Press:  28 February 2011

B.C. Cavenett  and
M. Deiri
B.C. Cavenett
Affiliation:
Department of Physics, University of Hull, U.K.
M. Deiri
Affiliation:
Department of Physics, University of Hull, U.K.
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Abstract

An investigation of the photoquenching behaviour in semi-insulating GaAs at low temperature shows that the ASGa antisite MCD-ODMR is persistently quenched while a broad vacancy-like resonance near g=2, which shows a variation of g-factor with absorption energy, broadens and becomes energy independent. The results are discussed in terms of interacting antisite and vacancy centres in analogy with the distant pair model for donor-acceptor pair recombination and the advantages of the triplet model for the EL2 metastahle state are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 195
Copyright
Copyright © Materials Research Society 1985

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