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Dissociation Kinetics of Shallow-Acceptor-Hydrogen Pairs in Silicon

Published online by Cambridge University Press:  25 February 2011

T. Zundel  and
J. Weber
T. Zundel
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr.1, D-7000 Stuttgart 80, Federal Republic of Germany
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr.1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Annealing of hydrogenated p-type silicon with a reverse bias applied to a Schottky diode allows us to precisely determine the dissociation frequency vA of shallow acceptor-hydrogen pairs (AH with A = B, Al, Ga, and In). The temperature dependent values of vA satisfy the relation vA = voAexp (-EA/kT), with voB = 2.8 . 1014 s-1, voAl = 3.1 . 1013 s-1, VoGa = 6.9 . 1013 s-1, and voIn = 8.4 · 1013 s-1. The dissociation energies EA depend only weakly on the acceptors: EB = (1.28±0.03)eV, EAl = (1.44±0.02) eV, EGa = (1.40±0.03) eV, and EIn = (1.42±0.05) eV. The dissociation frequency of BH pairs shifts to a lower value when H is replaced by the deuterium isotope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 443
Copyright
Copyright © Materials Research Society 1990

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