Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-06T08:14:11.020Z Has data issue: false hasContentIssue false
  • English
  • Français

Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion

Published online by Cambridge University Press:  22 February 2011

Z. Jamal  and
P. J. Goodhew
Z. Jamal
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom
P. J. Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom
Get access

Abstract

Carbon doping of GaAs and AlGaAs is easily carried out during chemical beam epitaxy by controlling the proportions of the precursors trimethylgallium and triethylgallium. The diffusion of C introduced at levels of up to 1020 cm−3, has been studied by SIMS and by TEM. In the latter case the destruction of short period GaAs-Al.3Ga.7As superlattices was monitored in order to assess the extent of diffusion after annealing at 800°C. The results confirm that C is quite a stable dopant. In addition, the destruction of the superlattices indicates that the diffusion mechanism of C involves group III sublattice sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 145
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chiu, T. H., Cunningham, J. E., Ditzenberger, J. A., Jan, W. Y. and Chu, S. N. G., J. Crystal Growth, 111, 274 (1991).Google Scholar
[2] Malik, R. J., Schubert, R. N., Walker, J. F. and Ryan, R. W., Appl. Phys. Lett., 53, 2661 (1988).Google Scholar
[3] Cunningham, B. T., Guido, L. J., Baker, J. E., Major, J. S. Jr, Holonyak, N. and Stillman, G. E., Appl. Phys. Lett., 55, 687 (1989).Google Scholar
[4] Konagai, M., Yamada, T., Akatsuka, T., Saito, K., Tokomitsu, E. and Takahashi, K., J. Crystal Growth, 98, 167 (1989).Google Scholar
[5] Abernathy, C. R., Pearton, S. J., Manasreh, M. O., Fischer, D. W. and Talwar, D. N., Appl. Phys. Lett., 57, 294(1990).Google Scholar
[6] Hanna, M. C., Majerfeld, A. and Szmyd, D. M., Appl. Phys. Lett., 59, 2001 (1991).Google Scholar
[7] Kawabe, M., Matsuura, N., Shimizu, N., Hasegawa, F. and Nannichi, Y., Jpn. J. Appl. Phys., 23, L623 (1984).Google Scholar
[8] Rao, E. V. K., Thibierge, H., Brillouet, F., Alexandre, F. and Azoulay, R., Appl. Phys. Lett., 46, 867 (1985).Google Scholar
[9] Clegg, J. B., in Growth and Characterisation of Semiconductors, edited by Stradling, R. A. & Klipstein, P. C. (Adam Hilger, Bristol, 1990) p. 87.Google Scholar