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Disorder Production at Metal-Silicon Interfaces by MeV/amu Ion Irradiation

Published online by Cambridge University Press:  25 February 2011

F. L. Headrick  and
L. E. Seiberling
F. L. Headrick
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
L. E. Seiberling
Affiliation:
Department of Physics, University of Pennsylvania, Philadelphia, PA 19104
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Abstract

We have shown that irradiation of Ag-Si and Au-Si interfaces by 14 MeV 016 ions can produce non-registered silicon at the metal-silicon interface. Evidence that this effect is due to electronic energy loss of the bombarding ion is presented. The possible relationship of this effect to MeV-ion enhanced adhesion is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 539
Copyright
Copyright © Materials Research Society 1985

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References

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