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Dislocations In GaN/Sapphire: Their Distribution And Effect On Stress And Optical Properties

Published online by Cambridge University Press:  10 February 2011

S. C. Jain ,
K. Pinardi ,
H. E. Maes ,
R. Van overstraeten ,
M. Willander  and
A. Atkinson
S. C. Jain
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
K. Pinardi
Affiliation:
Chamlers University of Technology, Department of Physics, S-41296 Göteborg, Sweden.
H. E. Maes
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
R. Van overstraeten
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
M. Willander
Affiliation:
Chamlers University of Technology, Department of Physics, S-41296 Göteborg, Sweden.
A. Atkinson
Affiliation:
Dapt. of Materials, Imperial College of Science, Technology and Medicine, london, UK.
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Abstract

Recent Raman experiments show that strain in GaN layers grown on the c-plane of sapphire is low at the surface, increases with depth, and is maximum at the interface. We show that this stress distribution can be attributed to the presence of a large number of threading dislocations. GaN photonic devices work in spite of large density of dislocations present in the GaN epilayers. We describe a model which shows that the effect of saturation of traps in the dislocations with increasing number of injected carriers can explain the high performance of the GaN devices containing the dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 875
Copyright
Copyright © Materials Research Society 1998

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References

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