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Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon

Published online by Cambridge University Press:  03 September 2012

G. Mariani ,
B. Pichaud ,
W. J. Taylor  and
W. -S. Yang
G. Mariani
Affiliation:
Laboratoire de Physique Cristalline, U.A. 797 C.N.R.S., Univ. Aix-Marseille III, 13397 Marseille Cedex 13, France
B. Pichaud
Affiliation:
Laboratoire de Physique Cristalline, U.A. 797 C.N.R.S., Univ. Aix-Marseille III, 13397 Marseille Cedex 13, France
W. J. Taylor
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke Univ., Durham NC 27706
W. -S. Yang
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke Univ., Durham NC 27706
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Abstract

Self-interstitial sink efficiencies of dislocations γ were measured in gold doped FZ (111) and (100) samples, we found respectively γ=0.4–0.5 and γ=0.2–0.3. γ is probably sensitive to dislocation character and to the deformation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 81
Copyright
Copyright © Materials Research Society 1992

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References

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