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Dislocation—Impurity Interaction and its Effect on Semiconductor Properties

Published online by Cambridge University Press:  28 February 2011

E.B. Yakimov
E.B. Yakimov*
Affiliation:
Institute of Problems of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, 142432 Chernogolovka, Moscow District, USSR
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Abstract

The results confirming a significant role of dislocation—impurity interaction in changing local properties of plastically deformed semiconductor crystals have been presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 173
Copyright
Copyright © Materials Research Society 1989

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References

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