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Dislocation Mobility in HCL-Doped Ice

Published online by Cambridge University Press:  15 February 2011

Xiaohong Hu ,
Kunlun Jia ,
Fuping Liu ,
Ian Baker  and
David Black
Xiaohong Hu
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
Kunlun Jia
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
Fuping Liu
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
Ian Baker
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
David Black
Affiliation:
U.S. Dept. of Commerce, National Institute of Standards and Technology, Gaithersburg, MD 20899
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Abstract

Dislocation velocities have been measured in both lightly and heavily HCl-doped ice single crystals using synchrotron-based, monochromatic X-ray topography. In the temperature range −10°C to −30°C, a concentration of ˜1 × 10−6M was found not to affect the mobility of either 60° or screw basal dislocations, confirming the earlier observations of C. Shearwood and R. W. Whitworth [Philosophical Magazine A65, 1992, 85]. However, heavier doping (˜1.9 × 10−4M) increased the basal dislocation velocity, compared to pure ice, by a factor of 2.6 at −16.4°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 287
Copyright
Copyright © Materials Research Society 1995

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