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Dislocation Defect States in Deformed Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Transient junction capacitance measurements on deformed silicon reveal a variety of states after deformation. Upon annealing or following more homogeneous deformation the defect spectrum shows a single broad feature. A state at E(0.38) has been tentatively assigned to defect sites along the dislocation. A broad band of states at H(0.35) is postulated to represent states due to the reconstructed dislocation core.
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- Copyright © Materials Research Society 1981