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Discrete Metal Deposition on Hydrogen Terminated Silicon Surfaces: Kinetics, Morphologies and Sensor Applications
Published online by Cambridge University Press: 10 February 2011
Abstract
The presence of ultra-trace (as low as 1010 – 1013 atoms/cm2) quantities of metal contaminants on silicon substrates is well known to adversely affect the electrical properties of the silicon based microelectronic devices. In this paper, we report our most recent experimental findings on the trace metal deposition mechanisms and its interplays with silicon substrate surface properties at specific chemical environments. The emphases were on the deposition kinetics and morphology, especially at the early stage of metal out-plating process. For instance, our atomic force microscopy results revealed that the Cu deposition on H-Si(100) surface was dominated by nucleation of nanometer-sized Cu nuclei at the initial stage (less than 60 seconds). The growth of the existing Cu nuclei was suppressed for the initial nucleation period until all the nucleation sites were consumed. The number of nucleation sites were found to closely relate to wafer intrinsic properties and solution compositions. A novel sensor which provides direct detection of part-per-trillion level of metal ion impurities in wet cleaning solutions will also be presented.
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- Copyright © Materials Research Society 1997
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