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Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

Published online by Cambridge University Press:  10 February 2011

N. Herbots ,
V. Atluri ,
Q. B. Hurst ,
J. M. Shaw ,
S. Banerjee ,
J. D. Bradley ,
R. J. Culbertson  and
D. J. Smith
N. Herbots
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
V. Atluri
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504 Intel Corporation, Chandler, AZ 85226
Q. B. Hurst
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
J. M. Shaw
Affiliation:
Dept. of Chem., Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287 Intel Corporation, Chandler, AZ 85226
S. Banerjee
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
J. D. Bradley
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
R. J. Culbertson
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
D. J. Smith
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
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Abstract

SiO2 films, 2-20 nm thick, were grown on passivated, ordered Si(100) to correlate electrical properties and oxidation rates with processing for ultra-thin gate oxides. Ordered Si(l 00) (1 × 1) stable in ambient air was obtained at room temperature by wet chemical cleaning. The thickest oxides were grown by Rapid Thermal Oxidation at 850°C, the thinnest at room temperature. O was detected by Ion Beam Analysis (IBA) using a combination of ion channeling with the 3.05 MeV 16O(α,α)16O nuclear resonance. It then becomes possible to measure order in thin SiO2 by comparing the total amount of O from rotating random spectra to disordered O detected by ion channeling, and detect the alignment of O with the atoms in Si(100)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 137
Copyright
Copyright © Materials Research Society 1998

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