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Direct-Writing of High-Aspect-Ratio Trenches in Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
Deep trenches have been etched in crystalline silicon with polarization-controlled, variable-curvature walls. Scan speeds of up to 10mm/s have been demonstrated. A model of the etching process has been developed which is based on a local, melt-enhanced etch rate. Comparisons of model predictions and experimental data are presented.
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- Copyright © Materials Research Society 1987
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