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The Direct-Write Polymer Field-Effect Transistor

Published online by Cambridge University Press:  11 February 2011

M. I. Sluch ,
R. M. Taylor  and
K. H. Church
M. I. Sluch
Affiliation:
Sciperio, Inc., 5202–2 North Richmond Hill Road, Stillwater, OK 74075, U.S.A.
R. M. Taylor
Affiliation:
Sciperio, Inc., 5202–2 North Richmond Hill Road, Stillwater, OK 74075, U.S.A.
K. H. Church
Affiliation:
Sciperio, Inc., 5202–2 North Richmond Hill Road, Stillwater, OK 74075, U.S.A.
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Abstract

Field-effect transistors (FET's) have been directly written onto glass and Si substrates. The FET';s use the regioregular conjugated polymer poly(hexylthiophene) as the active semiconductor, with a formed polyurethane insulator layer and drain, source, and gate electrodes written in Ag. The FET's were fabricated solely by direct writing techniques. The low processing temperatures, the elimination of photolithography, and the flexibility of the direct writing process make this technology especially attractive for low-frequency applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 734: Symposia A/B – Defect-Mediated Phenomena in Ordered Polymers – Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers , 2002 , B9.12
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Garnier, F., Hajlaoui, R., Yassar, A., and Srivastava, P., Science 265 (16), 1684 (1994).CrossRefGoogle Scholar
2. Sirringhaus, H., Kawase, T., Friend, R. H., Shimoda, T., Wu, W., and Woo, E. P., Science 290 (15), 2123 (2000).CrossRefGoogle Scholar
3. Sirringhaus, H., Tessler, N., and Friend, R. H., Science 280 (12), 1741 (1998).CrossRefGoogle Scholar
4. Sirringhaus, H., Friend, R. H., Li, X. C., Moratti, S. C., Holmes, A. B., and Feeder, N., Appl. Phys. Lett. 71 (26), 3871 (1997).CrossRefGoogle Scholar
5. Rogers, J. A., Bao, Z., and Dodabalapur, A., Proc. IEEE 21 (3), 100 (2000).Google Scholar
6. Rogers, J. A., Bao, Z., and Raju, V. R., Appl. Phys. Lett. 72 (21), 2716 (1998).CrossRefGoogle Scholar
7. Katz, H. E. and Bao, Z., J. Phys. Chem. B 104, 671 (2000).CrossRefGoogle Scholar
8. Gelinck, G. H., Geuns, T. C. T., and de Leeuw, D. M., Appl. Phys. Lett. 77 (10), 1487 (2000).CrossRefGoogle Scholar
9. Matters, M., de Leeuw, D. M., Vissenberg, M. J. C. M., Hart, C. M., Herwig, P. T., Geuns, T., Mutsaers, C. M. J., and Drury, C. J., Opt. Mater. 12, 189 (1999).CrossRefGoogle Scholar
10. Drury, C. J., Mutsaers, C. M. J., Hart, C. M., Matters, M., and de Leeuw, D. M., Appl. Phys. Lett. 73 (1), 108 (1998).CrossRefGoogle Scholar
11. Brown, A. R., Jarrett, C. P., de Leeuw, D. M., and Matters, M., Synth. Metals 88, 37 (1997).CrossRefGoogle Scholar
12. Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, J., Callegari, A., and Shaw, J. M., Science 283, 822 (1999).CrossRefGoogle Scholar
13. Shaw, J. M., Afzali, A., Dimitrakopoulos, C. D., Gelorme, J., Graham, T., Kagan, C., Kosbar, L., Malenfant, P., Mitzi, D., and Tromp, R., “Organic Semiconductor: Activities at IBM”, in Abstracts of IMAPS Workshop “Printing an Intelligent Future”, Nevada, March, 2002.Google Scholar
14. Klauk, H., Gundlach, D. J., and Jackson, T. N., IEEE Electron Dev. Lett. 20 (6), 289 (1999).CrossRefGoogle Scholar
15. Jackson, T. N., Lin, Y. Y., Gundlach, D. J., and Klauk, H., IEEE Sel. Top. Quantum Electron. 4 (1), 100 (1998).CrossRefGoogle Scholar
16. Klauk, H., Gundlach, D. J., Nichols, J. A., and Jackson, T. N., IEEE Trans. Electron Dev. 46 (6), 1258 (1999).CrossRefGoogle Scholar
17. Klauk, H., Gundlach, D. J., Bonse, M., Kuo, C. C., and Jackson, T. N., Appl. Phys. Lett. 76 (13), 1692 (2000).CrossRefGoogle Scholar
18. Kuo, C. T. and Chiou, W. H., Synth. Metals 88, 23 (1997).CrossRefGoogle Scholar
19. Singh, J., Semiconductor Devices (Wiley, New York, 2001).Google Scholar
20. Bianchi, R. F., Onmori, R. K., Goncalves, D., de Andrade, A.M., Faria, R. M., and Irene, E.A., Synth. Metals 121, 1687 (2001).CrossRefGoogle Scholar