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Direct-write Electron Beam Lithography: History and State of the Art

Published online by Cambridge University Press:  10 February 2011

Dustin W. Carr  and
Richard C. Tiberio
Dustin W. Carr
Affiliation:
Currently at Bell Laboratories - Lucent Technologies, 700 Mountain Ave, Murray Hill, NJ 07974
Richard C. Tiberio
Affiliation:
Cornell Nanofabrication Facility, Cornell University, Ithaca, NY 14853
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Abstract

Direct-write electron beam lithography is a patterning technique that has rapidly evolved over the last 40 years. For many years it has been possible to use electrons to pattern lines with widths as narrow as 10 rum. Recent advances in resist materials, electron sources, and system integration have further enhanced the capabilities. High-sensitivity resists provide substantial increases in the throughput without sacrificing resolution. Thermal field-emission sources improve the stability and reduce the minimum attainable spot size. Modem lithography systems integrate the electron beam column with advanced control electronics, making a system capable of nanometer-scale placement accuracy. In addition to these improvements, the technology is more accessible now than ever before, thanks to the proliferation of lithography systems consisting of modified scanning electron microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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References

1.Feymuan, R. P., reprinted in J. Micromech. Sys. 1, 60 (1992)Google Scholar
2.Christy, R. W., J. Appl. Phys. 31, 1680 (1960)Google Scholar
3.Haller, I. and White, P., J. Phys. Chem. 67, 1784 (1963)Google Scholar
4.Broers, A. N., Ph. D. Thesis, Cambridge University, (1965).Google Scholar
5.Chang, T. H. P. and Nixon, W. C., Record of the 9th Symposium on Electron, Ion and Laser Beam Technology, 123 (1967)Google Scholar
6.Zeheb, D., Kreitzer, N. H., and Cullum, D. G., Proc. Of the 2nd Intenational Conference on Electron and Ion Beam Science and Technology, 869 (1966).Google Scholar
7.Thornley, R. F. M. and Hatzakis, M., Record of the 9th Symposium on Electron, Ion and Laser Beam Technology, 94, (1967)Google Scholar
8.Hailer, I., Hatzakis, M., Srinivasan, R., IBM Journal, 12, 251 (1968)Google Scholar
9.Hatzakis, M. J.Electrochem. Soc. 116, 1033 (1969)Google Scholar
10.Hatzakis, M. and Broers, A. N., Record of the 11th symposium on Electron, Ion, and Laser Beam Technology (1971)Google Scholar
11.Wolf, E. D., Ozdemir, F. S., Perkins, W. E., and Coane, P. J., Record of the 11 th Symposium on Electron, Ion, and Laser Beam Technology, 331 (1971).Google Scholar
12.Pasiecznik, J., and Reeds, J. W., J. Vac. Sci. Technol. 15, 909 (1978)Google Scholar
13. Portions of this section reproduced from Tiberio, R. C., Ph. D. Thesis, Cornell University (1994), pp. 2–, with permission of the author.Google Scholar
14.Tiberio, R. C., Ph. D. Thesis, (1994) pp. 32–.Google Scholar
15.Tiberio, R. C., Carr, D. W., Rooks, M. J., Mihailov, S. J., Bilodeau, F., Albert, J., Stryckman, D., Johnson, D. C., Hill, K. O., McClelland, A. W., and Hughes, B. J., J. Vac. Sci. Technol. B, 16, 3237 (1998).Google Scholar
16.Guillorn, M. A., Carr, D. W., Tiberio, R. C., Simpson, M. L., and Greenbaum, E., not yet PublishedGoogle Scholar