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Direct Writing and Lift-Off Patterning of Copper Lines at 200°C Maximum Process Temperature

Published online by Cambridge University Press:  10 February 2011

C. M. Hong ,
H. Gleskova  and
S. Wagner
C. M. Hong
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
H. Gleskova
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
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Abstract

We adapted a new technique for depositing copper lines, at a maximum process temperature of 200°C. The technique is based on the decomposition of copper hexanoate by UV light, followed by annealing in H2 [1]. A copper film resistivity of 8 μΩcm is obtained. We patterned this copper metallization on Corning 7059 glass substrates by three different techniques, including exposure through a shadow mask, lift-off of xerographic toner, and direct writing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 35
Copyright
Copyright © Materials Research Society 1997

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References

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