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Direct Silicidation of Co on Si by Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

M. Tabasky ,
E. S. Bulat ,
B. M. Ditchek ,
M. A. Sullivan  and
S. Shatas
M. Tabasky
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
E. S. Bulat
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
B. M. Ditchek
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
M. A. Sullivan
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
S. Shatas
Affiliation:
Peak Systems, Inc., 4258 Solar Way, Fremont, Ca., 94538
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Abstract

Rapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 271
Copyright
Copyright © Materials Research Society 1986

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References

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