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Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation

Published online by Cambridge University Press:  25 February 2011

M. Bode ,
A. Ourmazd ,
J.A. Rentschler ,
M. Hong ,
L.C. Feldman  and
J.P. Mannaerts
M. Bode
Affiliation:
AT&T Bell Labs, Holmdel, NJ 07733
A. Ourmazd
Affiliation:
AT&T Bell Labs, Holmdel, NJ 07733
J.A. Rentschler
Affiliation:
AT&T Bell Labs, Holmdel, NJ 07733
M. Hong
Affiliation:
AT&T Bell Labs, Holmdel, NJ 07733
L.C. Feldman
Affiliation:
AT&T Bell Labs, Holmdel, NJ 07733
J.P. Mannaerts
Affiliation:
AT&T Bell Labs, Murray Hill, NJ 07974
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Abstract

We combine chemical lattice imaging and digital vector pattern recognition to study quantitatively, kinetic intermixing in GaAs/AlAs multilayers. We thus obtain, with atomic plane resolution and near-atomic sensitivity, composition profiles across each interface of a multilayer stack before and after ion-implantation. Our results show significant intermixing even when only one 320 keV Ga+ ion is implanted at 77 K into each 2000 A2 area of the interface. This corresponds to an incident ion dose of 5×l012/cm2.

The intermixing is not uniform along the interface. At each interface, we observe more intensely intermixed regions, whose widths correspond to those created by the damage track of a single implanted ion, as expected from Monte-Carlo simulations. It thus appears that we can directly image intermixing due to single energetic ions implanted into the multilayered GaAs/AlAs structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 197
Copyright
Copyright © Materials Research Society 1990

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References

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