Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:46:46.527Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Nanoscale Observation of Size Effect on Polarization Instability in Pb(Zr,Ti)O3 film capacitors

Published online by Cambridge University Press:  17 March 2011

Igor Stolichnov ,
Enrico Colla ,
Alexander Tagantsev ,
Seungbum Hong ,
Jeffrey S. Cross  and
Mineharu Tsukada
Igor Stolichnov
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Enrico Colla
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Alexander Tagantsev
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Seungbum Hong
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Jeffrey S. Cross
Affiliation:
Fujitsu Laboratories, Ltd., 10-1 Morinosato-wakamiya, Atsugi, 243-0197, Japan
Mineharu Tsukada
Affiliation:
Fujitsu Laboratories, Ltd., 10-1 Morinosato-wakamiya, Atsugi, 243-0197, Japan
Get access

Abstract

Mapping of polarization distributions in Pb(Zr,Ti)O3 ferroelectric capacitors with sizes down to 0.5 × 0.5 μm has been studied using scanning probe microscope (SPM) with detection of piezoelectric response through the top electrode. A well reproducible anomaly in polarization distribution namely elevated polarization at the edges and inverse polarization in the center has been observed for the FeCaps of several μm size. This polarization pattern is found to be insensitive to the poling voltage polarity and voltage stress prehistory but strongly dependent on the FeCAP size. Specifically, the polarization anomaly tends to disappear as the FeCAP size scales down to the submicron range. Tentative interpretation of this phenomenon in terms of strain-induced phase transitions in combination with depolarization effects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.16.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sakoda, T., Moise, T., Summerfelt, S., Colombo, L., Xing, G., Gilbert, S., Loke, A., Ma, S., Kavari, R., L. Wills and Amano, J., Jpn. J. Appl. Phys. 40, 2911 (2001).Google Scholar
[2] Alexe, M., Harnagea, C., Hesse, D., and Gösele, U., Appl. Phys. Lett. 79, 242 (2001).Google Scholar
[3] Scott, J., IEICE Transactions on Electronics E81–C, 447 (1998).Google Scholar
[4] Kammerdiner, L., Davenport, T., and Hadnagy, D., Patent US5969935 (1999).Google Scholar
[5] Colla, E., Hong, S., Taylor, D., Tagantsev, A., No, K., and Setter, N., Appl. Phys. Lett. 72, 2763 (1998).Google Scholar
[6] Tagantsev, A., Pertsev, N., Muralt, P., and Setter, N., Phys. Rev. B, 65, 12104 (2001).Google Scholar