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Direct Measurements of Fracture Toughness and Crack Growth in Polysilicon MEMS

Published online by Cambridge University Press:  01 February 2011

I. Chasiotis ,
S.W. Cho  and
K. Jonnalagadda
I. Chasiotis
Affiliation:
Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904
S.W. Cho
Affiliation:
Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904
K. Jonnalagadda
Affiliation:
Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904
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Abstract

Direct measurements of Mode-I critical stress intensity factor and crack tip displacements were conducted in the vicinity of atomically sharp edge cracks in polycrystalline silicon MEMS using our in situ Atomic Force Microscopy (AFM)/Digital Image Correlation (DIC) method. The average Mode-I critical stress intensity factor for various fabrication runs was 1.00 ± 0.1 MPa√m. The experimental crack tip displacement fields were in very good agreement with linear elastic fracture mechanics solutions. By means of an AFM, direct experimental evidence of incremental crack growth in polycrystalline silicon was obtained for the first time via spatially resolved crack growth measurements. The incremental crack growth in brittle polysilicon is attributed to its locally anisotropic polycrystalline structure which also results in different local and macroscopic (apparent) stress intensity factors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U10.6
Copyright
Copyright © Materials Research Society 2005

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References

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