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Direct Measurement of Planarization Length for Copper Chemical Mechanical Planarization Polishing (CMP) Processes Using a Large Pattern Test Mask

Published online by Cambridge University Press:  18 March 2011

Paul Lefevre ,
Albert Gonzales ,
Tom Brown ,
Gerald Martin ,
Tamba Tugbawa ,
Tae Park ,
Duane Boning ,
Michael Gostein  and
John Nguyen
Paul Lefevre
Affiliation:
International SEMATECH, Austin, TX;
Albert Gonzales
Affiliation:
International SEMATECH, Austin, TX;
Tom Brown
Affiliation:
International SEMATECH, Austin, TX;
Gerald Martin
Affiliation:
International SEMATECH, Austin, TX;
Tamba Tugbawa
Affiliation:
Microsystems Technology Laboratories, MIT, Cambridge, MA;
Tae Park
Affiliation:
Microsystems Technology Laboratories, MIT, Cambridge, MA;
Duane Boning
Affiliation:
Microsystems Technology Laboratories, MIT, Cambridge, MA;
Michael Gostein
Affiliation:
Philips Analytical, Natick, MA;
John Nguyen
Affiliation:
Speedfam-IPEC, Phoenix, AZ.
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Abstract

Wehaveusedalargepatterntestmaskandaspecificarrangementofstructuresonawaferfor direct measurement of an average planarization length for copper chemical mechanical polishing (CMP)processes.Weproposenewminimum,maximum,andaverageplanarizationlengthdefini-tions, based on up and down area measurements as a function of trench width. The average pla-narizationlengthisusefulforqualitativelycomparingtheplanarizationcapabilityofcopperCMP processes. We have also performed several experiments that show how the average planarization length depends on polish process settings such as down force and relative speed, as well as on consumables such as pad and slurry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M4.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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[2] Ouma, D., Modeling of Chemical Mechanical Polishing for Dielectric Planarization, Ph. D. Thesis, MIT, November 1998.Google Scholar
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