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Direct Kinetic Studies of Silicon Hydride Radicals
Published online by Cambridge University Press: 21 February 2011
Abstract
Laser-based techniques have been developed to directly study the kinetics of the reactions of the mono-silicon hydride radicals SiH, SiH2 and SiH3. A summary of rate constants obtained from these studies is presented along with a discussion of the implications of these results for present mechanistic models of the PECVD of amorphous hydrogenated silicon from silane.
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- Copyright © Materials Research Society 1990
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