Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T01:42:07.616Z Has data issue: false hasContentIssue false

Direct Growth of Single Walled Carbon Nanotubes for the Characterization of Structural and Electronic Properties

Published online by Cambridge University Press:  01 February 2011

Jianfeng Wu
Affiliation:
[email protected], Portland State University, Department of Physics, P.O. Box 751, Portland, OR, 97207-0751, United States, 503-725-8061
Joel Walenza-Slabe
Affiliation:
[email protected], Portland State University, Department of Physics, P.O. Box 751, Portland, OR, 97207-0751, United States
Timothy Gutu
Affiliation:
[email protected], Portland State University, Department of Physics, P.O. Box 751, Portland, OR, 97207-0751, United States
Jun Jiao
Affiliation:
[email protected], Portland State University, Department of Physics, P.O. Box 751, Portland, OR, 97207-0751, United States
Get access

Abstract

Fabricating horizontally aligned single wall carbon nanotubes (CNTs) with controlled properties has been one of the significant challenges for field-effect transistor (FET) applications. This report demonstrates a novel procedure for the fabrication of horizontally aligned single walled CNTs using the focused ion beam (FIB) and chemical vapor deposition (CVD). This method allows the morphologies, internal structures, and elemental compositions of CNTs to be directly analyzed in the scanning electron microscope (SEM) and transmission electron microscope (TEM) and avoids any sample preparation procedures that might alter the structure of the CNTs. The techniques of electron beam and ion beam induced deposition (EBID and IBID) of Pt electrodes to the CNT ends were compared and both were found to produce metal contamination around the target area. The fabrication of large area electrodes to assist in testing the CNT's electronic properties, including contact resistance and I-V characteristics was investigated. Using this fabrication technique we were able to perform an I-V sweep on a CNT circuit as well as detect the metal contamination on the CNTs which occurred as a result of electrode deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tans, S., Verschueren, A., and Dekker, C., Nature (London) 393, 49 (1998).Google Scholar
2. Berger, C., Yi, Y., Wang, Z. L., and Heer, W. A. de, Appl. Phys. A: Mater. Sci. Process. 74, 363 (2002).Google Scholar
3. Bockrath, M., Cobden, D. H., Lu, J., Rinzler, A. G., Smalley, R. E., Balents, L., and McEuen, P. L., Nature (London) 397, 598 (1999).Google Scholar
4. Dong, L., Youkey, S., Bush, J., Dubin, V. M., Chebiamand, R. V. Jiao, J., J. Appl. Phys. 024320 (2007).Google Scholar
5. Lacerda, R.G., Teh, A.S., Yang, M.H., Teo, K.B.K., Rupesinghe, N.L., Dalal, S.H., Koziol, K.K.K., Roy, D., Amaratunga, G.A.J., Milne, W.I., Chhowalla, M., Hasko, D.G., Wyczisk, F. and Legagneux, P., Appl. Phys. Lett. 84, 269 (2004).Google Scholar
6. Martel, R., Schmidt, T., Shea, H. R., Hertel, T., and Avouris, Ph., Appl. Phys. Lett. 73, 2447 (1998).Google Scholar
7. Gamo, K., Takakura, N., Samoto, N., Shimizu, R. and Namba, S., Jpn. J. Appl. Phys. 23 (1984) L293.Google Scholar
8. Homma, Y., Takagi, D., and Kobayashi, Y., Appl. Phys. Lett. 88, 023115 (2006).Google Scholar