Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T04:16:48.005Z Has data issue: false hasContentIssue false

Direct Experimental Evidence for Monosilane Formation Even after High Temperature Proton Implantation of Crystalline Silicon

Published online by Cambridge University Press:  26 February 2011

Jakub Tatarkiewicz
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
Andrzej Król
Affiliation:
Department of Physics, SUNY at Stony Brook, Stony Brook, NY 11794-3800
Get access

Abstract

The paper proves experimentally that no multisilanes are formed even after high temperature proton implantation of crystalline silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

permanent address: Institute of Experimental Physics, Warsaw University, ul. Hoźa 69, 00681 Warszawa, Poland

References

Literature

[1]Pankove, J. I., Vance, R. O. and Berkeyheiser, J. E., Appi. Phys. Lett. 45, 1100 ( 1984);Google Scholar
[2]Johnson, N. M., Herring, C. and Chadi, D. J., Phys. Rev. Lett. 56, 769 ( 1986);Google Scholar
[3]Cardona, M., phys. stat. sol. (b) 118, 463 (1983);Google Scholar
[4]Tatarkiewicz, J. and Król, A., Phys. Rev. B32, 8401 (1985);Google Scholar
[5]Król, A. and Tatarklewicz, J., Acta Phys. Pol. A69, 941 (1986);Google Scholar
[6]Biegelsen, D. K., Street, R. A., Tsai, C. C. and Knights, J. C., Phys. Rev. B20, 4839 (1979”);Google Scholar
[7]Tatarkiewicz, J. and Winer, K., phys. stat. sol. (b) 139, 409 (1987);Google Scholar
[8]Cardona, M., J. Mol. Structure 141, 33 (1986);Google Scholar
[9]Pantelides, S. T., Phys. Rev. Lett. 58, 1344 (1987);Google Scholar
[10]Baranowski, J. M., to be published.Google Scholar