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Direct Experimental Evidence for Monosilane Formation Even after High Temperature Proton Implantation of Crystalline Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
The paper proves experimentally that no multisilanes are formed even after high temperature proton implantation of crystalline silicon.
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- Research Article
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- Copyright © Materials Research Society 1988
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permanent address: Institute of Experimental Physics, Warsaw University, ul. Hoźa 69, 00681 Warszawa, Poland
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