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Direct Evidence of the Si Interstitialicy Injection and Fast diffusion effect in Si During Pulsed Laser Melt Process

Published online by Cambridge University Press:  15 February 2011

Yih Chang ,
J. Chen ,
S. Talwar ,
E. Y. Shu  and
Thomas. W. Sigmon
Yih Chang
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
J. Chen
Affiliation:
Technology and Manufacturing Group, Intel Corp., Santa Clara, CA 95051.
S. Talwar
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
E. Y. Shu
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Thomas. W. Sigmon
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
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Abstract

High temperature gradient induced fast diffusion effect during pulsed laser melt processes is reported for the first time in the Si semiconductor. We use both the oxidationinduced stacking faults and dislocation loops as markers to determine the degree of enhanced diffusion in the unmelted Si substrate by tracing their movement after laser melt. The crosssectional transmission electron microscope is employed to investigate the defect structures before and after laser melt. The expanded dislocation loops exhibit a significant diffusion and climb occurring during the nanosecond-scale processing duration. We also formulate and solve the governed diffusion equation, based on a high temperature gradient induced electric field, to simulate the dislocation movement. The agreement between the experimental and simulated results verifies that the fast diffusion effect indeed occurs in the Si semiconductor during the pulsed laser melt period.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 57
Copyright
Copyright © Materials Research Society 1992

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References

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