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The Diffusivity of Self-Interstitials in Silicon

Published online by Cambridge University Press:  26 February 2011

Frederick F. Morehead
Frederick F. Morehead*
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Values of the diffusivity of silicon self-interstitials have been previously inferred from analyses of the in-diffusion of Au in undislocated Si, e.g., 2×10-7 cm2 s-1 at 1100 °C. A more complete analysis by numerical integration of the effective diffusion equation with fewer assumptions yields ahigher minimum value, 6×10-6 cm2s-1 at 1100 °C. Recently published experiments showing no measurable difference in the oxidation-reduced diffusion of Sb in Si at 10 and 40 microns are consistent with this high value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 99
Copyright
Copyright © Materials Research Society 1988

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References

Refrences

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