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Diffusion, Segregation, and Recrystallization in High-Dose Ion-Implanted Si

Published online by Cambridge University Press:  21 February 2011

S. J. Pennycook
S. J. Pennycook*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6024
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Abstract

Using the new technique of Z-contrast scanning transmission electron microscopy (STEM), we have been able to study the segregation of Sb at an advancing SPE growth interface and the resulting interface breakdown. The first direct information is obtained on Sb diffusion in the amorphous phase, which is many orders of magnitude enhanced over tracer crystalline values. This controls both the dopant incorporation and the stability of the resulting supersaturated alloy. These results are compared to the behavior of the low melting point substitutional diffusers and the interstitial diffusers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 45
Copyright
Copyright © Materials Research Society 1989

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