Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-20T14:53:34.141Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in Silicon

Published online by Cambridge University Press:  21 February 2011

S.M. Myers  and
G.A. Petersen
S.M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
G.A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
Get access

Abstract

The diffusion of Au in Si and its binding to cavities and to precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, indirect determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.3 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 733
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Stolwijk, N.A., Hölzl, J., Frank, W., Weber, E.R., and Mehrer, H., Appl. Phys. A 39, 37 (1986).Google Scholar
2 Weber, E.R., in Properties of Silicon, edited by Ning, T. H. and Hilsum, C. (INSPEC, New York, 1988), pp. 413–415 and 432–434.Google Scholar
3 Gösele, U.M. and Tan, T.Y., in Electronic Structure and Properties of Semiconductors, edited by Schröter, W. (VCH, New York, 1991), pp. 197–247.Google Scholar
4 Wong-Leung, J., Nygren, E., and Williams, J.S., Appl. Phys. Lett. 67, 416 (1995); J. Wong-Leung, J.S. Williams, R.G. Elliman, E. Nygren, D.J. Eaglesham, D.C. Jacobson, and J.M. Poate, Nucl. Instrum. Meth. B 96, 253 (1995); J.S. Williams and J. Wong-Leung, private communication.Google Scholar
5 Griffioen, C.C., Evans, J.H., de Jong, P.C., and Van Veen, A, Nucl. Instrum. Meth. B 27, 417 (1987).Google Scholar
6 Myers, S.M. and Follstaedt, D.M., J. Appl. Phys., 1996, in press; and citations therein.Google Scholar
7 Hasegawa, T., Hosaka, S., and Hosoki, S., Jpn. J. Appl. Phys. 31, L1492 (1992).Google Scholar
8 Lin, X.F., Wan, K.J., Glueckstein, J.C., and Nogami, J., Phys. Rev. B 47, 3671 (1993).Google Scholar
9 Plass, R. and Marks, L.D., Surf. Sci., 1995, in press.Google Scholar