Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T18:56:24.522Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion of Si in GaAs From a Thin Si Film by Pulsed Laser Irradiation

Published online by Cambridge University Press:  15 February 2011

Y. I. Nissim ,
M. Greiner ,
R. J. Falster ,
J. F. Gibbons ,
P. Chye  and
C. Huang
Y. I. Nissim
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
M. Greiner
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
R. J. Falster
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305, USA
P. Chye
Affiliation:
Avantek, Santa Clara, CA 95051, USA
C. Huang
Affiliation:
Avantek, Santa Clara, CA 95051, USA
Get access

Abstract

The diffusion of Si into GaAs from a thin source has been investigated. Electron beam evaporated Si films were deposited on chromium–doped GaAs wafers. Pulsed irradiation from a Q–switched Nd:YAG laser resulted in the formation of n+ layers. After metal evaporation these layers displayed nonalloyed ohmic contact behavior of very low contact resistance (5×10−7 Ω−cm2 ) and good thermal stability at 300°C. SIMS analysis of these layers revealed a steplike Si profile and significant chromium redistribution within the laser induced molten layer. A major improvement in surface morphology was obtained using Si02 encapsulants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 677
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Young, R. T., Narayon, J., Westbrook, R. D. and Wood, R. F. in “Laser Solid Interaction and Laser Processing” (Ferris, S. D., Leamy, H. J. and Poate, J. M., eds.) p. 579 AIP, New York.Google Scholar
2. Davies, D. E., Ryan, T. G. and Lorenzo, J. P. in “Laser and Electron Beam Solid Interactions and Material Processing” (Gibbons, J. F., Hess, L. D. and Sigmon, T. W., eds.) p. 247, North Holland.Google Scholar
3. Nissim, Y. I, Gibbons, J. F. and Gold, R. B., IEEE Trans. Electron. Devices ED 28, 607 (1981).CrossRefGoogle Scholar
4. Pianetta, P., Amano, J., Woolhouse, G. and Stolte, C. A., in “Laser and Electron Beam Solid Interactions and Material Processing” (Gibbons, J. F., Hess, L. D. and Sigmon, T. W., eds.) p. 239, North Holland.Google Scholar
5. Nissim, Y. I., Gibbons, J. F., Magee, T. J. and Ormond, R., J. Appl. Phys. 52, 227 (1981).CrossRefGoogle Scholar
6. Harrison, H. B. and Williams, J. S., in “Laser and Electron Beam Processing of Materials” (White, C. W. and Peercy, P. S., eds.) p. 481, Academic Press.Google Scholar
7. Golecki, I., Nicholet, M. A., Maenpaa, M., Tandom, J. L., Kirkpatrick, C. G., Sadana, D. K. and Washburn, J., in “Laser and Electron Beam Processing of Materials” (White, C. W. and Peercy, P. S., eds.) p. 347, Academic Press.Google Scholar