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Diffusion of Hydrogen in 6H Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

M. K. Linnarsson ,
J. P. Doyle  and
B. G. Svensson
M. K. Linnarsson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
J. P. Doyle
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
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Abstract

6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 °C and 1150 °C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 °C. A diffusion coefficient of ∼10−14 cm2/s is extracted at 800°C with an approximate activation energy of ∼3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900°C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 625
Copyright
Copyright © Materials Research Society 1996

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