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Diffusion of Ga Vacancies and Si in GaAs

Published online by Cambridge University Press:  25 February 2011

K.B. Kahen ,
D.J. Lawrence ,
D.L. Peterson  and
G. Rajeswaran
K.B. Kahen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2011
D.J. Lawrence
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2011
D.L. Peterson
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2011
G. Rajeswaran
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2011
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Abstract

Using the Si-pair diffusion formalism of Greiner and Gibbons, a new Si diffusion model is developed based on the dominant diffusion species being SiGa+ - VGa- pairs, where VGa is the Ga vacancy. In the model, the unknown parameters are the pair diffusion coefficient (Dp) and the equilibrium constant, which are fitted to the experimental data. Dp is also derived to be equal to one-half the Ga vacancy diffusivity. To verify this relation, an experiment to determine the VGa diffusivity, Dv, is performed. A relation for Dv of the form 0.962 exp(-2.72 eV/kT) cm2/s is obtained, and it is shown that the fitted Dp values are indeed approximately equal to 0.5 Dv.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 677
Copyright
Copyright © Materials Research Society 1990

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References

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