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Diffusion Mechanisms and Nonequilibrium Defects in SI

Published online by Cambridge University Press:  21 February 2011

D. Mathiot  and
J. C. Pfister
D. Mathiot
Affiliation:
CNET - CNS - Chemin du Vieux Chêne - BP: 98-38243 Meylan Cedex - FRANCE
J. C. Pfister
Affiliation:
CNET - CNS - Chemin du Vieux Chêne - BP: 98-38243 Meylan Cedex - FRANCE
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Abstract

The problem of the respective contributions of vacancies and self interstitials to diffusion mechanims in silicon is clarified by using a consistent model for the diffuion of P, As and B which involves the resolution of the coupled continuity equations for the impurities, the vacancies and the self-interstitials. This model allows also the understanding of basic features concerning the kinetics of the point defects in presence of impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 117
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Mathiot, D. and Pfister, J.C., J. Appl. Phys. 55, 3518 (1984).Google Scholar
2. Yoshida, M., Arai, E., Nakamura, H. and Terunuma, Y., J. Appi. Phys. 45, 1498 (1974).10.1063/1.1663450Google Scholar
3. Fair, R. B. and Tsai, J.C.C., J. Electrochem. Soc. 124, 1107 (1977).CrossRefGoogle Scholar
4. Mathiot, D. and Pfister, J.C., J. Phys. Lettres 43, L353 (1982).10.1051/jphyslet:019820043012045300Google Scholar
5. Watkins, G.D., Phys. Rev. B 12, 5824 (1975).CrossRefGoogle Scholar
6. Loualiche, S., Lucas, C., Baruch, P., Gaillard, J.P. and Pfister, J.C., Phys. Status Solidi A 69, 663 (1982).10.1002/pssa.2210690229Google Scholar
7. Shibayama, H., Masaki, H., Ihikawa, H. and Hashimoto, H., J. Electrochem. Soc. 123, 742 (1976).10.1149/1.2132919CrossRefGoogle Scholar
8. Massoud, H.Z., HO, C.D. and Plummer, J.D., Report TR.DXG 501.82/ICL 17.79, Stanford Univ. 1982, p. 194.Google Scholar
9. Ho, C.P. and Plummer, J.D., J. Electrochem. Soc. 126, 1516 (1979).10.1149/1.2129320Google Scholar
10. Seeger, A. and Chick, K.P., Phys. Status Solidi 29, 455 (1968).10.1002/pssb.19680290202Google Scholar
11. Gosele, U. and Tan, T.Y., in “Defects in Semiconductors”, Mahajan, S. and Corbett, J.W. Eds, (North Holland, New York, 1983), p. 45.Google Scholar
12. Mathiot, D. and Pfister, J.C., Proc. of ICDS 13 (Coronado, 1984), to be published in J. Electron. Mater.Google Scholar
13. Strunk, H., Gosele, U. and Kolbesen, B.O., Appl. Phys. Lett. 34, 530 (1979).10.1063/1.90853Google Scholar
14. Harris, R.M. and Antoniadis, D.A., Appl. Phys. Lett. 43, 937 (1983).10.1063/1.94187Google Scholar
15. Fahey, P., Dutton, R.W. and Hu, S.M., Appl. Phys. Lett. 44, 777 (1984).10.1063/1.94915Google Scholar
16. Bourret, A. and Schroter, W., J. Ultra Microsc. (1984).Google Scholar
17. Fair, R.B., Inst. Phys. Conf. Ser. 46, 559 (1979).Google Scholar
18. Antoniadis, D.A. and Moskowitz, I., J. Appl. Phys. 53, 6788 (1982).10.1063/1.330067Google Scholar