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Diffusion Mechanism for Self Assembly on Inhomogeneously Strained Surfaces

Published online by Cambridge University Press:  10 February 2011

M.I. Larsson ,
R.F. Sabiryanov ,
K. Cho  and
B.M. Clemens
M.I. Larsson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA on leave from Department of Physics, Karlstad University, Sweden
R.F. Sabiryanov
Affiliation:
Department of Physics, University of Nebraska at Omaha, Omaha, NE
K. Cho
Affiliation:
Department of Mechanical Engineering, Stanford University, Stanford, CA
B.M. Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA
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Abstract

Growth of nanostructures with controlled shape, on inhomogeneously strained surfaces, is investigated by means of kinetic Monte Carlo (KMC) simulations. We propose a method to assemble self organized sub-lithographic nanostructures. The method is based on a strain-assisted mechanism for adatom surface diffusion and nucleation. For an inhomogeneous surface strain field there is normally a driving force toward the most tensile strained areas. It is shown by means of KMC simulations, that almost straight and continuous Ag nanowires can be produced on the Pt(111) surface if the growth is followed by high-temperature annealing. We suggest also how the method can be utilized as the first step of a process to reduce the circuit line width.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.55
Copyright
Copyright © Materials Research Society 2003

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References

[1] Deguchi, K., Miyoshi, K.,Oda, M., Matsuda, T., Ozawa, A., and Yoshihara, H., J.Vac. Sci. B 14, 4294 (1996).Google Scholar
[2] Cumming, D. R. S., Thomas, S., Beaumont, S. P., and Weaver, J.M.R., J. Vac. Sci. Technol. B 14, 4115 (1996).Google Scholar
[3] Sakamoto, T., Manako, S., Fujita, J., Ochiai, Y., Baba, T., Yamamoto, H., and Teshima, T., Appl. Phys. Lett. 77, 301 (2000).Google Scholar
[4] Venkatakrishnan, K., Tan, B., Stanley, P., Lim, L. E. N., and Ngoi, B. Kok Ann, Opt. Eng. 41, 1441 (2002).Google Scholar
[5] Reyntjens, S. and Puers, R., J. Micromech. Microeng. 11, 287 (2001).Google Scholar
[6] Unpublished results from our ongoing research.Google Scholar
[7] Horn von Hoegen, M., Z. Kristallogr. 214, 1 (1999).Google Scholar
[8] Bromann, K., Giovannini, M., Brune, H., and Kern, K., Eur. Phys. J. D 9, 25 (1999).Google Scholar
[9] Lundgren, E., Stanka, B., Schmid, M., and Varga, P., Phys. Rev. B 62, 2843 (2000).Google Scholar
[10] Kamins, T. I., Williams, R. S., and Basile, D. P., Nanotechnology 10, 117 (1999).Google Scholar
[11] Larsson, M. I., Lee, B., Sabiryanov, R. F., Cho, K., Nix, W., and Clemens, B. M., in Modeling and Numerical Simulation of Materials Behavior and Evolution, Eds. Tikare, V., Olevsky, E. A., and Zavaliangos, A., (Mater. Res. Soc., Pittsburgh, 2002) Vol. 731, 269.Google Scholar
[12] Sabiryanov, R. F., Larsson, M. I., Cho, K., Nix, W. D., and Clemens, B. M., Phys. Rev. B 67, 125412 (2003).Google Scholar
[13] Neal Bertram, H., Theory of Magnetic Recording, Cambridge University Press, 2001.Google Scholar
[14] Blech, I. A. and Levi, A. A., J. Appl. Mech. 48, 442 (1982).Google Scholar
[15] Kresse, G. and Furthmüller, J., Comput. Mat. Sci. 6, 15 (1996).Google Scholar
[16] Can, N., Townsend, P.D., Hole, D. E., Snelling, H. V., Ballesteros, J.M., and Afonso, C. N., J. Appl. Phys. 78, 6737 (1995).Google Scholar