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Diffusion in Gallium Arsenide and GaAs-Based Layered Structures

Published online by Cambridge University Press:  25 February 2011

U. Gösele ,
T. Y. Tan  and
Shaofeng Yu
U. Gösele
Affiliation:
School of Engineering, Duke University, Durham, NC 27706, USA
T. Y. Tan
Affiliation:
School of Engineering, Duke University, Durham, NC 27706, USA
Shaofeng Yu
Affiliation:
School of Engineering, Duke University, Durham, NC 27706, USA
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Abstract

The mechanisms of Ga self-diffusion can be derived from interdiffusion experiments in intrinsic and doped GaAs-based superlattices. These experiments allow to conclude that Ga self-diffusion in intrinsic and n-doped GaAs is carried by triply negatively charged gallium vacancies whereas in p-doped GaAs positively charged gallium self-interstitials dominate Ga self-diffusion. The diffusion mechanisms of Zn and Be are discussed with special emphasis on the difference between their in- and out-diffusion behavior which is due to diffusion-induced non-equilibrium point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 715
Copyright
Copyright © Materials Research Society 1990

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