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Diffusion Barrier Reliability with Respect to the Role of Tin Stoichiometry Between Al Metallization and Si Substrate

Published online by Cambridge University Press:  10 February 2011

Han-Yu Tseng ,
Aris Christou ,
Dan Young ,
Ted Tessner  and
Jon Orloff
Han-Yu Tseng
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland at College Park, MD, 20742
Aris Christou
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland at College Park, MD, 20742
Dan Young
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland at College Park, MD, 20742
Ted Tessner
Affiliation:
Northrup Grumman Advanced Technical Laboratory, Winterson and Nursery Rd., Linthicum, MD, 20901
Jon Orloff
Affiliation:
Department of Electrical Engineering, University of Maryland at College Park, MD, 20742
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Abstract

In this study, the relation between interdiffusion in Al/ TiN thin film couples and diffusion barrier stability has been investigated. The TiN diffusion barrier was deposited by reactive sputtering in an Ar-N2 gas mixture. The stoichiometry of TiN was achieved by varying the nitrogen-to-argon ratio in the sputtering gas. Interdiffiusion occurred after annealing for 30 minutes at 475°C and 575°C. Diffusion processes and interfacial reactions with respect to TiN stoichiometry were investigated via Auger Electron Spectroscopy (AES) depth profiling and X-ray diffraction (XRD). The barrier reliability with respect to the stoichiometry changes was established; nitrogen-deficient TiN films result in a high degree of interdiffiusion and decomposition at annealing temperatures of 475°C and 575°C. AI3Ti and AlN intermetallic compounds were formed at the interfaces. The sheet resistance of Al films was measured by four-point probe method. Resistance increases for all the annealed films were due to interdiffusion between Al and TiN. The degree of interdiffusion was analyzed by using AES and XRD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 323
Copyright
Copyright © Materials Research Society 1997

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