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Diffusion and Self-Gettering of Nickel in Float Zone Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

N. Gay  and
S. Martinuzzi
N. Gay
Affiliation:
Laboratoire de Photoélectricité - EA 882 D.S.O. “Défauts dans les Semi-conducteurs et leurs Oxydes” -, University of Marseilles, - 13397 Marseilles Cedex 20 - France
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité - EA 882 D.S.O. “Défauts dans les Semi-conducteurs et leurs Oxydes” -, University of Marseilles, - 13397 Marseilles Cedex 20 - France
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Abstract

External gettering techniques trap removed impurities in regions of a semiconductor which contain defects or in which the solubility is enhanced like in phosphorus diffused layers or in Al-Si alloy. If a fast diffuser like nickel is used in place of Al to obtain an alloy or a compound close to the surface, contamination and decontamination can occur resulting of the indiffusion and removal of nickel atoms. P type FZ samples were partly covered by nickel (nickel òn part 1 and not on part 2) and then annealed at 950°C for 1h.

As expected, after nickel indiffusion the diffusion length of minority carriers decreases but the values are always higher in part 1 than in part 2. Scanning infrared microscopy detects precipitates in part 2 and not in part 1. The results are explained assuming that the nickel-silicon compound formed at the surface serves as a diffusion source as well as an external self-gettering region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 469
Copyright
Copyright © Materials Research Society 1997

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References

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