Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T20:55:51.176Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion and Electromigration of Cu in Single Crystal Al Interconnects

Published online by Cambridge University Press:  10 February 2011

V. T. Srikar  and
C. V. Thompson
V. T. Srikar
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, [email protected]
C. V. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, [email protected]
Get access

Abstract

The electromigration-induced transport properties of Cu in Al-Cu alloys, and their effect on electromigration lifetimes in interconnects with bamboo grain structures are not well understood. To isolate and study the mechanisms and kinetics of Cu diffusion and electromigration in interconnects for which grain boundary transport is not dominant, we have developed a test structure consisting of parallel Al single crystal lines, with every alternate line terminating in contact pads. Cu is locally added to the same regions in all the lines, and the effect of temperature and electric field can be simultaneously characterized by analyzing the Cu concentration profile measured using electron-probe microanalysis. Comparison of the calculated values of diffusivities with the diffusivity of Cu through the Al lattice, and through dislocation cores in Al, suggests that the path of diffusion of Cu in Al single crystals is along the Al/AlOx interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 71
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1. Ames, I., d'Heurle, F. M. and Horstmann, R. E., IBM J. Res. Dev. 14, 461 (1970)10.1147/rd.144.0461Google Scholar
2. Howard, J. K. and Ross, R. F., Appl. Phys. Lett., 18, 344 (1971)Google Scholar
3. Ho, P. S. and Howard, J. K., J. Appl. Phys., 45, 3229 (1974)10.1063/1.1663763Google Scholar
4. Thompson, C. V. and Lloyd, J. R., MRS Bull. XVIII, 19 (1993)Google Scholar
5. Theiss, S., Prybyla, J. A. and Marcus, M. A., Mat. Res. Soc. Symp. Proc. 473, 387 (1997)Google Scholar
6. Korhonen, M. A., Borgesen, P., Tu, K. N. and Li, Che-Yu, J. Appl. Phys., 73, 3790 (1993)10.1063/1.354073Google Scholar
7. Knowlton, B. D., Clement, J. J. and Thompson, C. V., J. Appl. Phys., 81, 6073 (1997)10.1063/1.364446Google Scholar
8. Joo, Y.-C. and Thompson, C.V., J. Appl. Phys. 81, 6063 (1997);10.1063/1.364454Google Scholar
Joo, Y.-C., Ph.D. thesis, Dept. of Materials Science and Engineering, MIT 1995.Google Scholar
9. Thompson, C. V. and Cho, J., IEEE Electron Device Lett. EDL–7, 667 (1986)10.1109/EDL.1986.26513Google Scholar
10. Waldo, R. A., GMRFILM, MAS software library, U. of Michigan, Ann Arbor, MIGoogle Scholar
11. Peterson, N. L. and Rothman, S. J., Phys. Rev. B 1, 3264 (1970)10.1103/PhysRevB.1.3264Google Scholar
12. Volin, T. E., Lie, K. H. and Balluffi, R. W., Acta Met, 19, 263 (1971)10.1016/0001-6160(71)90092-7Google Scholar